Description
The YF10P02S3 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge . The complementary MOSFETsmay be used to form a level shifted high side switch, and for ahost of other applications.
General Features
● P-Channel VDS = -20V,ID =-8A
RDS(ON) < 19.5mΩ @ VGS=-4.5V
RDS(ON) < 22.3mΩ @ VGS=-2.5V