TDM3478 N沟道30V 9.7mΩ@4.5V
商品目录 | MOS(场效应管) |
|
漏源电压(Vdss) | 30V | |
连续漏极电流(Id)(25°C时) | 54A | |
栅源极阈值电压 | 2.5V @250uA | |
漏源导通电阻 | 6mΩ @12A,10V | |
DA功率耗散(Ta=25°C) | 2.08W | |
类型 | N沟道 |
TDM3478
DESCRIPTION
TheTDM3478 uses advanced trench technology to
provideexcellent RDS(ON) and low gate charge. This
device issuitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
l RDS(ON)< 9.7mΩ @ VGS=4.5V
RDS(ON)< 6mΩ @ VGS=10V
l HighPower and current handling capability
l SurfaceMount Package
l LeadFree and Green Devices available(RoHS Compliant)
Application
l PWMapplications
l Loadswitch
l Powermanagement
l PoweredSystems